Synthesis and Optical Properties of Single-Crystalline Silicon Nitride Nanowires with Controlled Dimensionality


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Single-crystalline silicon nitride nanowires with high purity, controlled dimensionality have been prepared via nitriding the nanocrystalline silicon powders at 1300°C~1400°C. The nanocrystalline silicon powders with average particle size of 20-80nm were obtained by cryomilling with the liquid nitrogen as the medium. Scanning electron microscopy, high resolution transmitted electron microscope, X-ray diffraction and UV-lamp microzone Raman spectrometer were used to characterize the as-synthesized nanowires. The effects of nitridation process (reaction temperature and holding time) and the particle size of nanocrystalline silicon powders on the phase and microstructure of the silicon nitride nanowires were analyzed. The obtained results show that the diameter of the nanowires can be controlled in the range of 40~100nm, and the length of 10~80 μm. The formation of the nanowires can be explained by the vapor-solid growth mechanism. The room temperature photoluminescence spectra show that the silicon nitride nanowires exhibit a broad visible emission band which ranges from 370 nm to 700 nm.



Key Engineering Materials (Volumes 512-515)

Edited by:

Wei Pan and Jianghong Gong




Z. H. Wang et al., "Synthesis and Optical Properties of Single-Crystalline Silicon Nitride Nanowires with Controlled Dimensionality", Key Engineering Materials, Vols. 512-515, pp. 106-109, 2012

Online since:

June 2012




[1] F. Munakata, K. Matsuo, K. Furuya, et al. Optical properties of β-Si3N4 single crystals grown from a Si melt in N2. Appl. Phys. Lett. 74 (1999) 3498-3500.


[2] R. Zanatta, L.A.O. Nunes. Green photoluminescence from Er-containing amorphous SiN thin films. Appl. Phys. Lett. 72 (1998) 3127-3129.


[3] T. Xie, G.S. Wu, B.Y. Geng, et al. A simple route to large scale synthesis of crystalline α-Si3N4 nanowires. Appl. Phys. A. 80 (2005) 1057-1059.

[4] J. Hu, Y. Bando, Z. Liu, et al. Uniform micro-sized α- and β-Si3N4 thin ribbons grown by a high-temperature thermal-decomposition/nitridation route. J. Chem. Eur. 10 (2004) 554-558.


[5] S. Motojima, T. Yamana, T. Araki, et al. Preparation of microcoiled Si3N4 fibers by impurity metal activated chemical vapor deposition and their mechanical properties. J. Electrochem. Soc. 142 (1995) 3141-3148.


[6] L.W. Yin, Y. Bando, Y.C. Zhu, et al. Synthesis, structure, and photoluminescence of very thin and wide alpha silicon nitride (α-Si3N4) single-crystalline nanobelts. Appl. Phys. Lett. 83 (2003) 3584-3586.


[7] F. Wang, G.Q. Jin, X.Y. Guo. Sol-gel synthesis of Si3N4 nanowires and nanotubes. Mater. Lett. 60 (2006) 330-333.

[8] H. Cui, B.R. Stoner. Nucleation and growth of silicon nitride nanoneedles using microwave plasma heating. J. Mater. Res. 16 (2001) 3111-3115.


[9] G.F. Zou, B. Hu, K. Xiong, et al. Single-crystalline alpha silicon-nitride nanowires large-scale synthesis, characterization, and optical properties. Appl. Phys. Lett. 86 (2005) 181901.


[10] K.F. Huo, Y.W. Ma, Y.M. Hu, et al. Synthesis of single-crystalline alpha silicon-nitride nanobelts by extended vapour-liquid-solid growth. Nanotechnology, 16 (2005) 2282-2287.

[11] F. Chen, Y. Li, W. Liu, et al. Synthesis of a silicon nitride single-crystailline nanowires by nitriding cryomilled nanocrystailline silicon powder. Scri. Mater. 60 (2009) 737-740.


[12] G. Pacchioni, D. Erbetta. Electronic structure and spectral properties of paramagnetic point defects in Si3N4. Phys. Rev. B. 60 (1999) 12617-12625.