Growth of GaAsP by Solid Source Molecular Beam Epitaxy

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The GaAsP crystal material grown on GaAs substrate has been extensive applications in the area of photoelectronic device. There because GaAsP have advantageous photoelectronic performance and adjustable band gap. We report growth of GaAs1-xPx grown on GaAs substrate by solid source molecular beam epitaxy (SSMBE). On the basis of the optimized Ⅴ/Ⅲ flux ratio, appropriate growth rate, and the substrate temperature for sample growth, different composition GaAs1-xPx layers had been grown on GaAs top. Lattice-mismatched became the big challenges to high-quality epitaxial growth of the GaAs1-x Px materials on GaAs substrate. The crystalline quality, surface morphology were performed by applying high resolution X-ray diffractometry (HRXRD) and high resolution optical microscopy. The etched region and internal defect were also investigated.

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Periodical:

Key Engineering Materials (Volumes 531-532)

Edited by:

Chunliang Zhang and Liangchi Zhang

Pages:

159-162

Citation:

G. C. Jiao et al., "Growth of GaAsP by Solid Source Molecular Beam Epitaxy", Key Engineering Materials, Vols. 531-532, pp. 159-162, 2013

Online since:

December 2012

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$38.00

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