Photoluminescence Properties of Silicon Nitride Prepared by VHF-PECVD
Since the visible photoluminescence (PL) in porous Si was observed by Canham, much attention has been paid to the light emission from silicon-based materials. In this work, luminescent amorphous silicon nitride films were prepared by very-high-frequency plasma enhanced chemical vapor deposition technique using ammonia, silane and hydrogen as source gases at a low temperature of 50 °C. It is found that the films exhibit strong visible light emissions with ranging from green to red region. Photoluminescence spectra show that the emission peaks as well as intensity strongly depends on the flow rates of ammonia. Combining with the analyses of Fourier transform infrared absorption spectra and the transmission spectra, it is suggested that the light emissions are originated from the radiative recombination in the band-tail states of amorphous silicon nitride.
Chunliang Zhang and Liangchi Zhang
J. Song et al., "Photoluminescence Properties of Silicon Nitride Prepared by VHF-PECVD", Key Engineering Materials, Vols. 531-532, pp. 392-395, 2013