The Laser Ablated Deposition of Si Nanocrystalline
The single crystalline Si target with high resistivity was ablated by a XeCl excimer laser (laser fluence 4 J/cm2, repetition rate 1 Hz), and at ambient pressure of 10Pa of pure Ar gas, the nanocrystalline silicon film was deposited on a glass or single crystalline Si substrate located at a distance of 3 cm from the Si target in 30 and 10min, respectively. The Raman and X-ray diffraction spectra of the film deposited on the glass substrate indicate the film is nanocrystalline, which means that it is composed of Si nanoparticles. Scanning electron microscope of the film on the Si substrate shows that the film has the mosaic structure of Si nano-crystallites of uniform size. The photoluminescence peak wavelength is 599nm with full width at half maximum of 56nm.
Chunliang Zhang and Liangchi Zhang
Y. Wu and X. H. Meng, "The Laser Ablated Deposition of Si Nanocrystalline", Key Engineering Materials, Vols. 531-532, pp. 481-484, 2013