Structure and Optical Properties of Al1−xScxN Thin Films
In this study, c-axis oriented AlN and Al1−xScxN films have been successfully grown on Si (100) and quartz glass by DC magnetron reactive sputtering method. The XRD patterns show that the crystal structure of the Al1−xScxN films is (002) orientation. The grain size and band gap energy (Eg) of the Al1−xScxN films decrease as the Sc concentration increases. The frequency of the E2 (high) mode observed in the Al1−xScxN films shows higher red shift compared to that observed in AlN film and the peak shifts to the low wave number with the increasing of Sc concentration.
Cheng Zhang, Nanchun Chen and Jin Hu
J. Yang et al., "Structure and Optical Properties of Al1−xScxN Thin Films", Key Engineering Materials, Vol. 537, pp. 140-143, 2013