Exciton Localization and Stimulated Emission of ZnO Nanorods


Article Preview

High yield ZnO nanorods are synthesized by a simple wet chemical method. The crystal morphology and structure of the ZnO nanorods are examined by transmission electron microscopy (TEM) and X-Ray Diffraction (XRD), respectively. The properties of the excitonic luminescence are investigated by temperature dependent photoluminescence (PL) spectra. Barely observed visible emission band indicates the good optical quality of the ZnO nanorods and the abnormal position and intensity changes of the emission peaks indicates the localization property of exciton.



Edited by:

Yuan Ming Huang




C. P. Li et al., "Exciton Localization and Stimulated Emission of ZnO Nanorods", Key Engineering Materials, Vol. 538, pp. 161-164, 2013

Online since:

January 2013




[1] M. H. Huang, S Mao, H. Feick, H.Q. Yan, et al., Room temperature ultraviolet nanowire nanolasers, Science, 292 (2001) 1897-1899.

DOI: https://doi.org/10.1126/science.1060367

[2] Ü. Özgür, Ya. I. Alivov, C. Liu, A. Teke, et al., A comprehensive review of ZnO materials and devices, 98 (2005) 041301-1-103.

[3] C.P. Li, Y.Z. Lv, L Guo, H.B. Xu, X.C. Ai, J.P. Zhang, Raman and excitonic photoluminescence characterizations of ZnO star-shaped nanocrystals, Journal of Luminescence 122–123 (2007) 415-417.

DOI: https://doi.org/10.1016/j.jlumin.2006.01.173

[4] Mohammed Riaz , Jinhui Song , Omer Nur , Zhong Lin Wang , and Magnus Willander, Study of the Piezoelectric Power Generation of ZnO Nanowire Arrays Grown by Different Methods, Adv. Funct. Mater., 21(2011) 628-633.

DOI: https://doi.org/10.1002/adfm.201001203

[5] Xinhai Han, Guanzhong Wang, Jiansheng Jie, et al., Controllable Synthesis and Optical Properties of Novel ZnO Cone Arrays via Vapor Transport at Low Temperature, J. Phys. Chem. B 109 (2005) 2733-2738.

DOI: https://doi.org/10.1021/jp0475943

[6] Y. C. Kong, D. P. Yu, B. Zhang, W. Fang, and S. Q. Feng, Ultraviolet-emitting ZnO nanowires synthesized by a physical vapor deposition approach, Appl. Phys. Lett., 78( 2001) 407-409.

DOI: https://doi.org/10.1063/1.1342050

[7] J. K. Lee, C. R. Tewell, R. K. Schulze, and M. Nastasi, et al., Appl. Phys. Lett. 86 (2005) 183111-1-3.

[8] D. M. Bagnall, Y. F. Chen, Z. Zhu, and T. Yao, et al., Appl. Phys. Lett., 73 (1998) 1038-1040.

[9] Yamada Y, Ueki Y, Nakamura K, et al., Stokes shifit of biexcitions in AlxGa1-xN epitaxial layers, Phys. Rev. B, 70 (2004) 195210-195215.