Improving Amorphous Selenium Photodetector Performance Using an Organic Semiconductor

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In this paper, a thin layer of perylene tetracarboxylic bisbenzimidazole (PTCBI) is investigated as a potential hole-blocking contact in an a-Se photodetector. The behavior of the device was characterized as a function of electric field under light and dark conditions. It was found that the PTCBI layer permits operation at high electric fields (>>10 V/μm) while maintaining a dark current density below 200 pA/mm2. Short pulse experiments were performed to assure that charge accumulation at the organic/a-Se interface is negligible and does not reduce the electric field in the a-Se layer. The detector investigated uses a simple low temperature fabrication process based on widely available semiconductor materials that can be easily integrated into current large area digital imager manufacturing processes.

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Edited by:

Evangelos Hristoforou and D.S. Vlachos

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451-454

DOI:

10.4028/www.scientific.net/KEM.543.451

Citation:

S. Abbaszadeh et al., "Improving Amorphous Selenium Photodetector Performance Using an Organic Semiconductor", Key Engineering Materials, Vol. 543, pp. 451-454, 2013

Online since:

March 2013

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$38.00

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