Improving Amorphous Selenium Photodetector Performance Using an Organic Semiconductor
In this paper, a thin layer of perylene tetracarboxylic bisbenzimidazole (PTCBI) is investigated as a potential hole-blocking contact in an a-Se photodetector. The behavior of the device was characterized as a function of electric field under light and dark conditions. It was found that the PTCBI layer permits operation at high electric fields (>>10 V/μm) while maintaining a dark current density below 200 pA/mm2. Short pulse experiments were performed to assure that charge accumulation at the organic/a-Se interface is negligible and does not reduce the electric field in the a-Se layer. The detector investigated uses a simple low temperature fabrication process based on widely available semiconductor materials that can be easily integrated into current large area digital imager manufacturing processes.
Evangelos Hristoforou and D.S. Vlachos
S. Abbaszadeh et al., "Improving Amorphous Selenium Photodetector Performance Using an Organic Semiconductor", Key Engineering Materials, Vol. 543, pp. 451-454, 2013