The Microwave Dielectric Materials of (Zn1-xMgx)TiNb2O8 for Electroceramics Devices Applications
The microwave dielectric properties of ZnTiNb2O8 ( ~34, Qf ~42,500GHz, ~ –52ppm/°C) was reported by Hong et. al. To lower the dielectric loss of ZnTiNb2O8, we studied the systems of (Zn1-xMgx)TiNb2O8 (x=0.02-0.1) ceramics. The manner of equivalent-charge trace substitutions for Zn2+-sites were replaced with Mg2+. In order to achieve more stability, CaTiO3 ( ~ +800ppm/°C) was used to adjust the negative τf of (Zn0.95Mg0.05)TiNb2O8 ( ~ –58ppm/°C). A bandpass filter using coupled microstrip-line resonators have been designd for wireless LAN system such as IEEE 802.11 ( 2.4 or 5 GHz). The response of the implemented filter used 0.8(Zn0.95Mg0.05)TiNb2O8-0.2 CaTiO3 ( ~35.77, Qf ~18,000GHz, ~ +4ppm/°C) dielectric substrates. In this paper, the bandpass filter area designed on 0.8(Zn0.95Mg0.05)TiNb2O8-0.2 CaTiO3 is reduced 88% than FR4 substrates and the near zero τf makes better frequency stability.
Sean Li, Thiam Teck Tan and Danyang Wang
C. L. Huang et al., "The Microwave Dielectric Materials of (Zn1-xMgx)TiNb2O8 for Electroceramics Devices Applications", Key Engineering Materials, Vol. 547, pp. 49-55, 2013