Optimization of Chemical Mechanical Planarization Process of High Enrichment Slurry Under Low Pressure


Article Preview

The polishing process was optimized according to the polishing rate and its consistency of HE slurry with different dilution multiple on the copper wafers, it can be confirmed that: the best pressure value of HE1, HE10, HE20, HE50 type slurries was 6890Pa, the best flow rate value of the preceding three slurries was 300ml/min, the best value of the HE50 slurry was 400ml/min. Through the planarization effects of the slurries with different dilution multiple, it can be obtained that: the initial dishing and erosion heights of the samples were both 1270nm and -500nm, and the two values respectively changed to 539.3nm, -75.7nm and 796.3nm, -191.3nm after being treated by HE1 and HE10 slurries, the step height of the wafer changed from 117nm to 72nm after being treated by HE20 slurry, the step height of the wafer changed from 88nm to 71nm after being treated by HE50 slurry. It was concluded that: the HE slurry shows strong ability for step removal when the slurry is diluted by 1 times and 10 times, the HE slurry also owns high planarization ability when the slurry is diluted by 20 times and 50 times.



Key Engineering Materials (Volumes 645-646)

Edited by:

Fei Tang




Y. Li et al., "Optimization of Chemical Mechanical Planarization Process of High Enrichment Slurry Under Low Pressure", Key Engineering Materials, Vols. 645-646, pp. 291-296, 2015

Online since:

May 2015




* - Corresponding Author

[1] Li Y, Liu Y L, Niu X H, Bu X F, Li H B, Tang J Y, Fan S Y. Application of a macromolecular chelating agent in chemical mechanical polishing of copper film under the condition of low pressure and low abrasive concentration[J]. Journal of Semiconductors, 2014, 35(1)016001: 1-5.

DOI: https://doi.org/10.1088/1674-4926/35/1/016001

[2] Oh S, Seok J. An Integrated Material Removal Model for Silicon Dioxide Layers in Chemical Mechanical Polishing Processes[J]. Wear. 2009, 266(7-8): 839-849.

DOI: https://doi.org/10.1016/j.wear.2008.12.014

[3] Hu Y, Liu Y L, Liu X Y, Wang L R, He Y G. Effect of copper slurry on polishing characteristics[J]. Journal of Semiconductors, 2011, 32(11)116001: 1-5.

DOI: https://doi.org/10.1088/1674-4926/32/11/116001

[4] Hu Y, Liu Y L, Liu X Y, He Y G, Wang L R, Zhang B G. Effect of alkaline slurry on the electric character of the pattern Cu wafer[J]. Journal of Semiconductors, 2011, 32(7)076002: 1-3.

DOI: https://doi.org/10.1088/1674-4926/32/7/076002

[5] Noh K, Saka N, Chun J H. Effect of Slurry Selectivity on Dielectric Erosion and Copper Dishing in Copper Chemical-Mechanical Polishing[J]. CIRP Annals-Manufacturing Technology, 2004, 53(1): 463-466.

DOI: https://doi.org/10.1016/s0007-8506(07)60740-9

[6] Wang C W, Ma S H, Liu Y L, Chen R, Cao Y. CMP process optimization using alkaline bulk copper slurry on a 300mm Applied Materials Reflexion LK system[J]. Journal of Semiconductors, 2013, 34(12)126001: 1-3.

DOI: https://doi.org/10.1088/1674-4926/34/12/126001

[7] Wang S L, Yin K D, Li X, Yue H W, Liu Y L. Planarization mechanism of alkaline copper CMP slurry based on chemical mechanical kinetics[J]. Journal of Semiconductors, 2013, 34(8)086003: 1-4.

DOI: https://doi.org/10.1088/1674-4926/34/8/086003

[8] Yin K D, Wang S L, Liu Y L, Wang C W, Li X. Evaluation of planarization capability of copper slurry in the CMP process[J]. Journal of Semiconductors, 2013, 34(3)036002: 1-4.

DOI: https://doi.org/10.1088/1674-4926/34/3/036002

[9] Lei H, Luo J J. CMP of hard disk substrate using a colloidal SiO2 slurry: preliminary experimental investigation[J]. Wear, 2004, 257(5-6): 461-470.

DOI: https://doi.org/10.1016/j.wear.2004.01.017