Effect of Sputtering Power on Morphological, Structural and Optical Properties of Al-Doped Zinc Oxide Film

Abstract:

Article Preview

Transparent conductive Al-doped zinc oxide (ZnO:Al) films with different sputtering power were prepared on glass substrate using an RF sputtering technique. Two main peaks of the hexagonal wurtzite structure in the (002) and (004) direction were observed in every deposited ZnO:Al film. Intensities of these peaks were increased with the increasing sputtering power. Moreover, the surface roughness tended to increase with increasing sputtering power whereas the electrical resistance decreased with increasing sputtering power. The ZnO:Al film deposited at 150 and 200 W showed maximum optical transmittance of over 80% in the visible wavelength range. All results confirmed that the sputtering power directly affected film thickness because the higher sputtering power gave rise to a higher deposition rate; the surface morphology of the deposited films was dependent on the sputtering power and the optical properties were indirectly affected by the power of the deposition process.

Info:

Periodical:

Edited by:

Peerapong Pinwanich

Pages:

593-598

DOI:

10.4028/www.scientific.net/KEM.659.593

Citation:

P. Boonprakom and W. Rattanasakulthong, "Effect of Sputtering Power on Morphological, Structural and Optical Properties of Al-Doped Zinc Oxide Film", Key Engineering Materials, Vol. 659, pp. 593-598, 2015

Online since:

August 2015

Export:

Price:

$38.00

* - Corresponding Author

[1] E.G. Fu, D. M Zhuang, G. Zhang, Z. Ming, W.F. Yang and J. J. Liu, Properties of transparent conductive ZnO: Al thin films prepared by magnetron sputtering, Microelectronics Journal. 35 (2004) 383–387.

DOI: 10.1016/s0026-2692(03)00251-9

[2] F.H. Wang, H.P. Chang, C.C. Tseng and C.C. Huang, Effects of H2 plasma treatment on properties of ZnO: Al thin films prepared by RF magnetron sputtering, Surface & Coatings Technology. 205 (2011) 5269–5277.

DOI: 10.1016/j.surfcoat.2011.05.033

[3] A. Antony, P. Carreras, T. Keitzl, R. Rolda´n, O. Nos, P. Frigeri, J. M. Asensi and J. Bertomeu, Influence of RF power on the properties of sputtered ZnO: Al thin films, Phys. Status Solidi A. 207 (2010), 1577–1580.

DOI: 10.1002/pssa.200983765

[4] C. Guillen and J. Herrero, Optical, electrical and structural characteristics of Al: ZnO thin films with various thicknesses deposited by DC sputtering at room temperature and annealed in air or vacuum, Vacuum. 84 (2010) 924–929.

DOI: 10.1016/j.vacuum.2009.12.015

[5] D. Song, A. G. Aberle and J. Xia, Optimization of ZnO: Al films by change of sputter gas pressure for solar cell application, Applied Surface Science. 195 (2002) 291–296.

DOI: 10.1016/s0169-4332(02)00611-6

[6] J.W. Kim and H. B. Kim, Effect of RF power on an Al-doped ZnO thin film deposited by RF magnetron sputtering, Journal of the Korean Physical Society. 59 (2011) 2349-2353.

DOI: 10.3938/jkps.59.2349

[7] S. Fernandez and F.B. Naranjo, Optimization of aluminum-doped zinc oxide films deposited at low temperature by radio-frequency sputtering on flexible substrates for solar cell applications, Solar Energy Materials & Solar Cells. 94 (2010) 157–163.

DOI: 10.1016/j.solmat.2009.08.012

[8] W. Yang, Z. Liu, D.L. Peng, F. Zhang, H. Huang, Y. Xie and Z. Wu, Room-temperature deposition of transparent conducting Al-doped ZnO films by RF magnetron sputtering method, Applied Surface Science, 255 (2009) 5669 –5673.

DOI: 10.1016/j.apsusc.2008.12.021

[9] X. J. Wang, Q.S. Lei, W. Xu, W. Zhou and J. Yu, Preparation of ZnO: Al thin film on transparent TPT substrate at room temperature by RF magnetron sputtering technique, Material Letters. 63 (2009) 1371–1373.

DOI: 10.1016/j.matlet.2008.12.027

[10] Z.A. Wang, J.B. Chu, H.B. Zhu, Z. Sun, Y.W. Chen and S.M. Huang, Growth of ZnO: Al films by RF sputtering at room temperature for solar cell applications, Solid-State Electronics. 53 (2009) 1149–1153.

DOI: 10.1016/j.sse.2009.07.006

[11] H.B. Zhou, H.Y. Zhang, L.W. Han and J.C. Han, Effects of sputtering power on the properties of Al-doped ZnO films deposited on amorphous silicon films substrate, Superlattices and Microstructures. 64 (2013) 563–568.

DOI: 10.1016/j.spmi.2013.10.024

[12] N. E. Duygulu, A.O. Kodolbas and A. Ekerim, Effects of argon pressure and r. f. power on magnetron sputtered aluminum doped ZnO thin films, Journal of Crystal Growth. 394 (2014) 116-125.

DOI: 10.1016/j.jcrysgro.2014.02.028

[13] C.A. Tsenga, J.C. Lina, Y.F. Changa, S.D. Chyouc and K.C. Pengd, Microstructure and characterization of Al-doped ZnO films prepared by RF power sputtering on Al and ZnO targets, Applied Surface Science. 258 (2012) 5996-6002.

DOI: 10.1016/j.apsusc.2012.02.061

In order to see related information, you need to Login.