Optical Characterization of Quaternary AlInGaN Multiquantum Wells

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Quaternary AlInGaN/AlInGaN multiquantum-well (MQW) structures were grown by metal-organic vapour-phase epitaxy (MOVPE). The influence of QW pairs and QW barrier width on the optical properties of the samples is investigated by means of temperature and incident-power dependent photoluminescence (PL) measurements. The PL emission peaks redshift and the PL peak intensities increase as the number of QW pairs increases. On the other side, a blueshift of the PL peak energy and reduction of the PL peak intensity are observed for the sample with thinner barrier width. These results are explained by carrier localization effect. The S-shaped temperature-dependence of the PL peak energies indicates the existence of localized states induced by the potential fluctuations. The estimated degree of localization effect is found to be enhanced for the sample with more QW pairs and thicker barrier layers. Observing the incident-power dependent PL spectra, the estimated amounts of localization effect of the samples are consistent with the incident-power induced blueshifts of PL peak energies and the slope exponents of power-law form of integrated PL intensity.

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Periodical:

Edited by:

Katsuyuki Kida and Koshiro Mizobe

Pages:

111-115

DOI:

10.4028/www.scientific.net/KEM.748.111

Citation:

Y. F. Wu and J. C. Lee, "Optical Characterization of Quaternary AlInGaN Multiquantum Wells", Key Engineering Materials, Vol. 748, pp. 111-115, 2017

Online since:

August 2017

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$38.00

* - Corresponding Author

[1] J.C. Zhang, Y.H. Zhu, T. Egawa, S. Sumiya, M. Miyoshi, M. Tanaka, Influence of pulse width on electroluminescence and junction temperature of AlInGaN deep ultraviolet light-emitting diodes, Appl. Phys. Lett. 92 (2008) 191917.

DOI: 10.1063/1.2931698

[2] P.M. Tu, C.Y. Chang, S.C. Huang, C.H. Chiu, J.R. Chang, W.T. Chang, D.S. Wuu, H.W. Zan, C.C. Lin, H.C. Kuo, C.P. Hsu, Investigation of efficiency droop for InGaN-based UV light-emitting diodes with InAlGaN barrier, Appl. Phys. Lett. 98 (2011).

DOI: 10.1063/1.3591967

[3] S. Nakamura, S.F. Chichibu, Introduction to Nitride Semiconductor Blue Lasers and Light Emitting-Diodes, Taylor & Fancis, New York, (2000).

[4] D. Zhu, M.J. Kappers, P.M.F.J. Costa, C. McAleese, F.D.G. Rayment, G.R. Chabrol, D.M. Graham, P. Dawson, E.J. Thrush, J.T. Mullins, C.J. Humphreys, A comparative study of near-UV emitting InGaN quantum wells with AlGaN and AlInGaN barriers, Phys. Status Solidi (a) 203 (2006).

DOI: 10.1002/pssa.200565250

[5] S.J. Chang, W.C. Lai, Y.K. Su, J.F. Chen, C.H. Liu, U.H. Liaw, InGaN-GaN Multiquantum-Well Blue and Green Light-Emitting Diodes, IEEE J. Sel. Top. Quant. 8 (2002) 278-283.

DOI: 10.1109/2944.999181

[6] M.M. Liang, G.E. Weng, J.Y. Zhang, X.M. Cai, X.Q. Lü, L.Y. Ying, B.P. Zhang, Influence of barrier thickness on the structural and optical properties of InGaN/GaN multiple quantum wells, Chin. Phys. B. 23 (2014) 054211.

DOI: 10.1088/1674-1056/23/5/054211

[7] P.G. Eliseev, P. Perlin, J. Lee, M. Osiński, Blue, temperature-induced shift and band-tail emission in InGaN-based light sources, Appl. Phys. Lett. 71 (1997) 569-571.

DOI: 10.1063/1.119797

[8] J.E. Fouquet, A.E. Siegman, Room-temperature photoluminescence times in a GaAs/AlxGa1–xAs molecular beam epitaxy multiple quantum well structure, Appl. Phys. Lett. 46 (1985) 280-282.

DOI: 10.1063/1.95658

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