Surface Functionalization of Two-Dimensional Vertically Aligned Semiconductor Heterojunctions


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Large-scale fabrication of two-dimensional (2D) nanomaterials by vapor phase depostion enabled the establishment of vertically aligned semiconductor herterojunctions. However, the property modulation of 2D semiconductor heterojunctions remains chanlleging within such thin layers. Herein, we proposed a general strategy towards the surface functionlization of 2D semiconductor heterojunctions simply by two-step atomic layer deposition (ALD) process with following post-annealing. TiO2-WO3 heterojunction was taken as a typical case in this work and its electrochemical properties were significantly improved via the proposed strategy. This strategy may open a new pathway for facile functionalization of 2D nanomaterials for the energy conversion and storage devices.



Edited by:

Serge Zhuiykov




S. Zhuiykov and Z. Y. Hai, "Surface Functionalization of Two-Dimensional Vertically Aligned Semiconductor Heterojunctions", Key Engineering Materials, Vol. 765, pp. 8-11, 2018

Online since:

March 2018




* - Corresponding Author

[1] S. Zhuiykov, M.K. Akbari, Z. Hai, et al., Mater. Des. 120 (2017) 99–108.

[2] S. Zhuiykov, L. Hyde, Z. Hai, et al., Appl. Mater. Today. 6 (2017) 44–53.

[3] Z. Hai, M.K. Akbari, C. Xue, et al., Sensors Actuators B Chem. 245 (2017) 954–962.

[4] M. Karbalaei, Z. Hai, Z. Wei, et al., Mater. Res. Bull. 95 (2017) 380–391.

[5] Z. Hai, M.K. Akbari, Z. Wei, et al., Electrochim. Acta. 246 (2017) 625–633.