Electrical Conductivity Measurements of Al-Doped ZnO Semiconductor in High Temperature

Abstract:

Article Preview

Electrical conductivity plays an important role in the performance of thermoelectric semiconductor material. This study discusses the electrical conductivity measurements of Zinc Oxide (ZnO) doping Aluminium (Al) pellet as a material of thermoelectric using four-point probe method at high temperatures. Al-doped ZnO (2 wt%) pellet was sintered at the temperature of 1100°C, 1200°C, 1300°C, 1400°C, and 1500°C with the heating rate of 8°C/minute. SEM and XRD tests show that the higher sintering temperature effects to larger grain sizes, better crystallinity, and lower porosity. There is no electrical conductivity in the sintering sample at 1100°C due to the small grain sizes and high porosity. In the sintering sample at 1500°C, the phase of ZnAl2O4 erupted. The highest electrical conductivity of 5923.48S/m of Al-doped ZnO pellet was obtained at the sintering temperature of 1400°C with measurement temperature of 500°C.

Info:

Periodical:

Edited by:

Takashi Amemiya, Xuelin Lei and Xiong Qi Peng

Pages:

105-109

Citation:

S. Hadi et al., "Electrical Conductivity Measurements of Al-Doped ZnO Semiconductor in High Temperature", Key Engineering Materials, Vol. 772, pp. 105-109, 2018

Online since:

July 2018

Export:

Price:

$38.00

* - Corresponding Author

[1] Li, J.C., Y. Wang, and D.C. Ba, Effects of Al Doping on the Optical and Electrical Properties of Pre-Synthesized ZnO Powders by Solid State Method. Material Science, 2012. 32: pp.347-355.

[2] Choi, S.-M., et al., Oxide-based thermoelectric power generation module using p-type Ca3Co4O9 and n-type (ZnO)7In2O3 legs. Energy Conversion and Management, 2010. 52(1): p.335–339.

DOI: https://doi.org/10.1016/j.enconman.2010.07.005

[3] Zhang, L.Q., et al., Fabrication and properties of p-type K-doped Zn1−xMgxO thin film. Journal of Alloys and Compounds, 2011. 509: p.7405–7409.

DOI: https://doi.org/10.1016/j.jallcom.2011.04.047

[4] Janotti, A., and C.G.V.d. Walle, Fundamentals of Zinc Oxide as a Semiconductor. 2009. 126501: p.29.

[5] Kobayashi, K., et al., Preparation of p-type ZnO Films by Alternate Deposition of ZnO and Mg3N2 Films. Procedia Engineering, 2012. 36: p.427 – 433.

DOI: https://doi.org/10.1016/j.proeng.2012.03.062

[6] Han, L., et al., High-temperature thermoelectric properties and energy transfer devices of Ca3Co4−xAgxO9 and Ca1−ySmyMnO3. Journal of Alloys and Compounds, 2011. 509: p.8970– 8977.

DOI: https://doi.org/10.1016/j.jallcom.2011.06.113

[7] Qu, X., et al., Thermoelectric Properties and Electronic Structure of Al-doped ZnO. Solid State Communications, 2010. 151: p.332–336.

DOI: https://doi.org/10.1016/j.ssc.2010.11.020

[8] Kurniawan, A., et al., The electric conductivity of Cu-doped ZnO as the effect of sintering temperature. AIP Conference Proceedings, 2016. 1717(1): p.040002.

[9] ASTM, Standard Test Methods for Resistivity of Semiconductor Materials, in ASTM Standart. 2003, ASTM International: West Conshohocken, United States. p.6.

[10] Neves, N., et al., Aluminum doped zinc oxide sputtering targets obtained from nanostructured powders: processing and application. Journal of the European Ceramic Society, 2012. 32(16): pp.4381-4391.

DOI: https://doi.org/10.1016/j.jeurceramsoc.2012.08.007

[11] Fergus, J.W., Oxide materials for high-temperature thermoelectric energy conversion. Journal of the European Ceramic Society, 2012. 32(3): pp.525-540.

DOI: https://doi.org/10.1016/j.jeurceramsoc.2011.10.007

[12] Akinnifesi, J. and O. Akinwunmi, Effect of Sintering Temperature on the Microstructure and Electrical Characteristics of Low Clamping Voltage Zinc Oxide-Based Ceramic Varistor. Journal of Materials Science Research, 2015. 4(3): p.40.

DOI: https://doi.org/10.5539/jmsr.v4n3p40

[13] Zhang, Z., et al., Influence of deposition temperature on the crystallinity of Al-doped ZnO thin films at glass substrates prepared by RF magnetron sputtering method. Superlattices and Microstructures, 2011. 49(6): pp.644-653.

DOI: https://doi.org/10.1016/j.spmi.2011.04.002

[14] Weigand, C., et al., Electrical, optical and structural properties of Al-doped ZnO thin films grown on GaAs (111) B substrates by pulsed laser deposition. Thin Solid Films, 2013. 545: pp.124-129.

DOI: https://doi.org/10.1016/j.tsf.2013.07.052

[15] Tabassum, S., et al., Electrical stability of Al-doped ZnO transparent electrode prepared by sol-gel method. Applied Surface Science, 2016. 377: pp.355-360.

DOI: https://doi.org/10.1016/j.apsusc.2016.03.133

[16] Bu, I.Y., Sol-gel production of aluminum doped zinc oxide using aluminum nitrate. Materials Science in Semiconductor Processing, 2014. 27: pp.19-25.

DOI: https://doi.org/10.1016/j.mssp.2014.06.011

[17] Cheng, H., et al., Characterization of Al-doped ZnO thermoelectric materials prepared by RF plasma powder processing and hot press sintering. Ceramics International, 2009. 35(8): pp.3067-3072.

DOI: https://doi.org/10.1016/j.ceramint.2009.04.010

[18] Tsubota, T., et al., Thermoelectric properties of Al-doped ZnO as a promising oxide material for high-temperature thermoelectric conversion. J. Mater. Chem., 1997. 7(1): pp.85-90.

DOI: https://doi.org/10.1039/a602506d

[19] Liu, J., et al., Comparative study of the sintering process and thin film sputtering of AZO, GZO and AGZO ceramics targets. Ceramics International, 2014. 40(8): pp.12905-12915.

DOI: https://doi.org/10.1016/j.ceramint.2014.04.150

[20] Lee, J. and Y.S. Park, Characteristics of Al-doped ZnO films annealed at various temperatures for InGaZnO-based thin-film transistors. Thin Solid Films, 2015. 587: pp.94-99.

DOI: https://doi.org/10.1016/j.tsf.2015.04.012

Fetching data from Crossref.
This may take some time to load.