Photoluminescence Spectroscopy of Si:SiO2 Films Fabricated by Radio Frequency Sputtering

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We fabricated Si:SiO2 films including silicon nanocrystallites as one of nanoscale materials, which were prepared by co-sputtering of silicon and silicon dioxide. Optical properties of these films were analyzed by photoluminescence spectroscopy. Specimens fabricated at higher pressure between 0.3 Pa to 0.9 Pa emitted photoluminescence strongly. Photoluminescence was strong at shorter wavelength. In case fabricated in same Ar gas pressure, specimens that had composition ratio, 0.04, of the silicon for target emitted the photoluminescence strongly. Peaks existed on some PL spectra of specimen fabricated by the Ar gas pressure 0.3, 0.5 Pa and the composition ratio 0.04. Suppose that silicon nanocrystallites were fabricated, these size were few nm.

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Edited by:

Osamu Hanaizumi

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37-42

Citation:

K. Tanaka and K. Okamoto, "Photoluminescence Spectroscopy of Si:SiO2 Films Fabricated by Radio Frequency Sputtering", Key Engineering Materials, Vol. 790, pp. 37-42, 2018

Online since:

November 2018

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