Effect of LaNiO3 Buffer Layer on the Electrical and Optical Properties of Nonpolar ZnO Film Deposited on (100) Si Substrate

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Nonpolar ZnO films are deposited on (100) Si substrate using LaNiO3 conducting buffer layer by radio frequency sputtering. X-ray diffraction results show that ZnO films are (110) and (002) orientation with and without LaNiO3 buffer layer. The current behavior of ZnO/LaNiO3 heterojunction exhibits ohmic conduction which is different from the diode-like rectification current behavior of ZnO film using insulated buffer layers. The photoluminescence properties indicate that the (110)-oriented nonpolar ZnO film has better band-edge emission than that of (002)-oriented polar ZnO film. It is suggested that LaNiO3 buffer layer can be used to deposit silicon-based ZnO film with well ohmic contact electrode in optoelectronic devices.

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Edited by:

Henry Hu and Gu Xu

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29-34

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Q. L. Zhao et al., "Effect of LaNiO3 Buffer Layer on the Electrical and Optical Properties of Nonpolar ZnO Film Deposited on (100) Si Substrate", Key Engineering Materials, Vol. 793, pp. 29-34, 2019

Online since:

January 2019

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