Dislocation Substructures and Plasticity of GaAs below 400°C as a Function of Doping

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Periodical:

Materials Science Forum (Volumes 10-12)

Edited by:

H.J. von Bardeleben

Pages:

781-786

Citation:

P. Boivin et al., "Dislocation Substructures and Plasticity of GaAs below 400°C as a Function of Doping", Materials Science Forum, Vols. 10-12, pp. 781-786, 1986

Online since:

January 1986

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$38.00

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