Defects in Electron or Proton Irradiated Undoped and Si-Doped GaAs by Positron Annihilation

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Periodical:

Materials Science Forum (Volumes 105-110)

Edited by:

Zs. Kajcsos and Cs. Szeles

Pages:

1085-1088

DOI:

10.4028/www.scientific.net/MSF.105-110.1085

Citation:

Y. Itoh et al., "Defects in Electron or Proton Irradiated Undoped and Si-Doped GaAs by Positron Annihilation", Materials Science Forum, Vols. 105-110, pp. 1085-1088, 1992

Online since:

January 1992

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