Materials Science Forum, ISSN: 1662-9752, Vol. 1157, pp 9-16

doi: 10.4028/p-1uGwT1

© 2025 The Author(s). Published by Trans Tech Publications Ltd, Switzerland.

Submitted:
2024-09-19

Revised:
2025-02-26

Accepted:
2025-02-28

Online:
2025-09-05

Nitrogen Dopant Incorporation into Epitaxial -SiC and the Influence of CVD Growth Parameters

The original version of this paper is available on https://www.scientific.net/MSF.1157.9.pdf

Alexander Schrader , Nils Steller , Dennis Reimann and Firas Faisal

Nexperia Germany GmbH, Stresemannallee 101, 22529 Hamburg, Germany

alexander.schrader@nexperia.com, nils.steller@nexperia.com, dennis.reimann@nexperia.com,

Keywords: Epitaxy, CVD, Nitrogen Doping, Dopant Incorporation, Growth Parameters, C/Si Ratio, Site Competition, On-wafer Uniformity

Abstract

This study investigates the multifaceted relationships between key process parameters such as ratio, system pressure, temperature, and growth rate and their effects on nitrogen dopant incorporation in homoepitaxial layers on substrates. We focus on understanding how these growth parameters influence the in situ nitrogen incorporation during chemical vapor deposition (CVD) of epitaxial layers on 150 mm commercially available SiC substrates. Through a carefully designed experimental framework, which explores the interactions between each parameter and the C/Si ratio, we have shed light on a refined approach for epitaxial growth. This approach may not only stabilize the nitrogen dopant concentration across the wafer but possibly also reduces the formation of epitaxial defects.

Summary

The original version of this paper is available on https://www.scientific.net/MSF.1157.9.pdf

This study investigates the effects of key chemical vapor deposition process parameters as system pressure, temperature, growth rate, and ratio on nitrogen dopant incorporation in SiC epitaxy. The results demonstrate that increased system pressure and temperature promote nitrogen incorporation, while an elevated growth rate reduces doping efficiency. These trends are primarily driven by changes in the effective C/Si ratio near the wafer surface, which alters the balance between nitrogen and carbon incorporation due to site competition. Variations in the ratio interact differently with each parameter, affecting dopant distribution and defect formation.

This study provides a refined understanding of the interplay between growth conditions and dopant incorporation, offering insights for optimizing epitaxial growth processes for SiC. The findings highlight that optimizing these parameters can potentially lead to a more uniform dopant concentration profile across wafers, improving the quality of SiC substrates. However, further investigation is required to assess how these adjustments impact defect densities, such as stacking faults and pit defects, which could influence the performance of SiC-based electronic components. Additionally, understanding the molecular dynamics during epitaxial growth, including gas-phase reactions and precursor interactions with the SiC lattice, is essential. Future research using advanced
simulation models or in situ measurements will be critical in refining epitaxial growth processes on commercially available wafers.

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The original version of this paper is available on https://www.scientific.net/MSF.1157.9.pdf

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