Coexistence of Two Localised States of the Ge Donor in GaAs as Evidenced by a Huge Increase of the Electron Mobility at PPC Conditions

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Periodical:

Materials Science Forum (Volumes 143-147)

Edited by:

Helmut Heinrich and Wolfgang Jantsch

Pages:

1013-1018

DOI:

10.4028/www.scientific.net/MSF.143-147.1013

Citation:

C. Skierbiszewski et al., "Coexistence of Two Localised States of the Ge Donor in GaAs as Evidenced by a Huge Increase of the Electron Mobility at PPC Conditions", Materials Science Forum, Vols. 143-147, pp. 1013-1018, 1994

Online since:

October 1993

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