Determination of the Decay Rate of Photoionized Te Atoms Implanted in GaAs and Al.3Ga.7As by Mössbauer Spectroscopy

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Periodical:

Materials Science Forum (Volumes 143-147)

Edited by:

Helmut Heinrich and Wolfgang Jantsch

Pages:

1105-1110

DOI:

10.4028/www.scientific.net/MSF.143-147.1105

Citation:

H. Bemelmans et al., "Determination of the Decay Rate of Photoionized Te Atoms Implanted in GaAs and Al.3Ga.7As by Mössbauer Spectroscopy", Materials Science Forum, Vols. 143-147, pp. 1105-1110, 1994

Online since:

October 1993

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