Alloy Dependence of the Carrier Concentration and Negative Persistant Photoconductivity in Ga1-xAlxSb/InAs/Ga1-xAlxSb Single Quantum Wells

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Periodical:

Materials Science Forum (Volumes 143-147)

Edited by:

Helmut Heinrich and Wolfgang Jantsch

Pages:

611-616

DOI:

10.4028/www.scientific.net/MSF.143-147.611

Citation:

H. J. von Bardeleben et al., "Alloy Dependence of the Carrier Concentration and Negative Persistant Photoconductivity in Ga1-xAlxSb/InAs/Ga1-xAlxSb Single Quantum Wells", Materials Science Forum, Vols. 143-147, pp. 611-616, 1994

Online since:

October 1993

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