Raman Study of "Boson Peak" in Amorphous Silicon: Dependence on Hydrogen and Carbon Content

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Periodical:

Materials Science Forum (Volumes 173-174)

Edited by:

M. Briege, H. Dittrich, M. Klose, H.W. Schock, J. Werner

Pages:

243-248

DOI:

10.4028/www.scientific.net/MSF.173-174.243

Citation:

M. Ivanda et al., "Raman Study of "Boson Peak" in Amorphous Silicon: Dependence on Hydrogen and Carbon Content", Materials Science Forum, Vols. 173-174, pp. 243-248, 1995

Online since:

September 1994

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$35.00

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