Evidence for High Vacancy Concentrations in Heavily Doped N-Type Silicon from Mossbauer Experiments

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Periodical:

Materials Science Forum (Volumes 196-201)

Edited by:

M. Suezawa and H. Katayama-Yoshida

Pages:

1117-1122

DOI:

10.4028/www.scientific.net/MSF.196-201.1117

Citation:

G. Weyer et al., "Evidence for High Vacancy Concentrations in Heavily Doped N-Type Silicon from Mossbauer Experiments", Materials Science Forum, Vols. 196-201, pp. 1117-1122, 1995

Online since:

November 1995

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$35.00

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