On the Behaviour of the Divacancy in Silicon during Anneals between 200 and 350°C.
M. Suezawa and H. Katayama-Yoshida
M.-A. Trauwaert et al., "On the Behaviour of the Divacancy in Silicon during Anneals between 200 and 350°C.", Materials Science Forum, Vols. 196-201, pp. 1147-1152, 1995