On the Behaviour of the Divacancy in Silicon during Anneals between 200 and 350°C.

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Periodical:

Materials Science Forum (Volumes 196-201)

Edited by:

M. Suezawa and H. Katayama-Yoshida

Pages:

1147-1152

DOI:

10.4028/www.scientific.net/MSF.196-201.1147

Citation:

M.-A. Trauwaert et al., "On the Behaviour of the Divacancy in Silicon during Anneals between 200 and 350°C.", Materials Science Forum, Vols. 196-201, pp. 1147-1152, 1995

Online since:

November 1995

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$35.00

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