Study of Defect Behavior in Ion-Implanted Si Wafers by Slow Positron Annihilation Spectroscopy

Abstract:

Article Preview

Info:

Periodical:

Materials Science Forum (Volumes 196-201)

Edited by:

M. Suezawa and H. Katayama-Yoshida

Pages:

1165-1170

DOI:

10.4028/www.scientific.net/MSF.196-201.1165

Citation:

M. Fujinami and S. Hayashi, "Study of Defect Behavior in Ion-Implanted Si Wafers by Slow Positron Annihilation Spectroscopy", Materials Science Forum, Vols. 196-201, pp. 1165-1170, 1995

Online since:

November 1995

Export:

Price:

$35.00

In order to see related information, you need to Login.