Arsenic-Antisite-Related Defects in GaAs Grown at Low Temperature: Charaterization of Localized States

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Periodical:

Materials Science Forum (Volumes 196-201)

Edited by:

M. Suezawa and H. Katayama-Yoshida

Pages:

249-254

DOI:

10.4028/www.scientific.net/MSF.196-201.249

Citation:

J.I. Landman et al., "Arsenic-Antisite-Related Defects in GaAs Grown at Low Temperature: Charaterization of Localized States", Materials Science Forum, Vols. 196-201, pp. 249-254, 1995

Online since:

November 1995

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