Generation of EL2- Level Upon Rapid Thermal Annealing in Low-Temperature GaAs Layers Grown by MBE

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Periodical:

Materials Science Forum (Volumes 196-201)

Edited by:

M. Suezawa and H. Katayama-Yoshida

Pages:

255-260

DOI:

10.4028/www.scientific.net/MSF.196-201.255

Citation:

T.-C. Lin et al., "Generation of EL2- Level Upon Rapid Thermal Annealing in Low-Temperature GaAs Layers Grown by MBE", Materials Science Forum, Vols. 196-201, pp. 255-260, 1995

Online since:

November 1995

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$35.00

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