In Situ Phosphorus Doping of Si and Si1-xGex Epitaxial Layers by RTP/VLP-CVD

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Periodical:

Materials Science Forum (Volumes 196-201)

Edited by:

M. Suezawa and H. Katayama-Yoshida

Pages:

349-352

DOI:

10.4028/www.scientific.net/MSF.196-201.349

Citation:

X. D. Huang et al., "In Situ Phosphorus Doping of Si and Si1-xGex Epitaxial Layers by RTP/VLP-CVD", Materials Science Forum, Vols. 196-201, pp. 349-352, 1995

Online since:

November 1995

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