Growth and Realization of InGaAs/InP and InGaAs/InGaAsP Quantum Photonic Devices Grown by Chemical Beam Epitaxy

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Edited by:

A.M. Mancini, C. Paorici and M.L. Terranova

Pages:

109-114

DOI:

10.4028/www.scientific.net/MSF.203.109

Citation:

C. Rigo et al., "Growth and Realization of InGaAs/InP and InGaAs/InGaAsP Quantum Photonic Devices Grown by Chemical Beam Epitaxy", Materials Science Forum, Vol. 203, pp. 109-114, 1996

Online since:

February 1996

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