The Influence of an Ultrathin Pseudomorphic Interface Control Layer of Si on the Growth of SrF2 on GaAs

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Edited by:

A.M. Mancini, C. Paorici and M.L. Terranova

Pages:

129-136

DOI:

10.4028/www.scientific.net/MSF.203.129

Citation:

S. Heun et al., "The Influence of an Ultrathin Pseudomorphic Interface Control Layer of Si on the Growth of SrF2 on GaAs", Materials Science Forum, Vol. 203, pp. 129-136, 1996

Online since:

February 1996

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