Charge Carrier Lifetime Modificaiton in Silicon by High Energy H+, He+ Ion Implantation

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Periodical:

Materials Science Forum (Volumes 248-249)

Edited by:

A.G. Balogh and G. Walter

Pages:

101-106

DOI:

10.4028/www.scientific.net/MSF.248-249.101

Citation:

N.Q. Khánh et al., "Charge Carrier Lifetime Modificaiton in Silicon by High Energy H+, He+ Ion Implantation", Materials Science Forum, Vols. 248-249, pp. 101-106, 1997

Online since:

May 1997

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$35.00

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