Interfacial Mixing in Al-Ge Thin Film Junction Studied by Variable Low Energy Positron Beam

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Periodical:

Materials Science Forum (Volumes 255-257)

Edited by:

Y. C. Jean, Morten Eldrup, David M. Schrader, Roy N. West

Pages:

692-694

DOI:

10.4028/www.scientific.net/MSF.255-257.692

Citation:

G. Venugopal Rao et al., "Interfacial Mixing in Al-Ge Thin Film Junction Studied by Variable Low Energy Positron Beam", Materials Science Forum, Vols. 255-257, pp. 692-694, 1997

Online since:

September 1997

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$35.00

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