Molecular Beam Epitaxy Growth and Characterisation of GaAs1-xNxLayers

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Periodical:

Materials Science Forum (Volumes 264-268)

Edited by:

G. Pensl, H. Morkoç, B. Monemar and E. Janzén

Pages:

1185-1188

DOI:

10.4028/www.scientific.net/MSF.264-268.1185

Citation:

J.V. Thordson et al., "Molecular Beam Epitaxy Growth and Characterisation of GaAs1-xNxLayers", Materials Science Forum, Vols. 264-268, pp. 1185-1188, 1998

Online since:

February 1998

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$35.00

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