Heteroepitaxial Growth of 3C-SiC on Surface-Structure-Controlled MBE Layer by Low-Pressure CVD
p.243
p.243
Formation of Pyramidal Pits at the Interface of 3C-SiC and Si(001) Substrates Grown by Gas Source MBE
p.247
p.247
Growth of SiC Layers on (111) Si by Solid Source Molecular Beam Epitaxy
p.251
p.251
Improved Epitaxy of Cubic SiC Thin Films on Si(111) by Solid-Source MBE
p.255
p.255
Observation of 3-Fold Periodicity in 3C-SiC Layers Grown by MBE
p.259
p.259
Electronic Properties of SiC Polytypes and Heterostructures
p.265
p.265
Band Structure Interpretation of the Optical Transitions between Low-Lying Conduction Bands in n-Type Doped SiC Polytypes
p.271
p.271
Calculated Density of States and Carrier Concentration in 4H- and 6H-SiC
p.275
p.275
Theoretical Studies on Defects in SiC
p.279
p.279
Observation of 3-Fold Periodicity in 3C-SiC Layers Grown by MBE
Abstract:
Info:
Periodical:
Materials Science Forum (Volumes 264-268)
Edited by:
G. Pensl, H. Morkoç, B. Monemar and E. Janzén
Pages:
259-264
DOI:
10.4028/www.scientific.net/MSF.264-268.259
Citation:
U. Kaiser et al., "Observation of 3-Fold Periodicity in 3C-SiC Layers Grown by MBE", Materials Science Forum, Vols. 264-268, pp. 259-264, 1998
Online since:
February 1998
Keywords:
Price:
$35.00
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