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Heteroepitaxial Growth of 3C-SiC on Surface-Structure-Controlled MBE Layer by Low-Pressure CVD
p.243

Formation of Pyramidal Pits at the Interface of 3C-SiC and Si(001) Substrates Grown by Gas Source MBE
p.247

Growth of SiC Layers on (111) Si by Solid Source Molecular Beam Epitaxy
p.251

Improved Epitaxy of Cubic SiC Thin Films on Si(111) by Solid-Source MBE
p.255

Observation of 3-Fold Periodicity in 3C-SiC Layers Grown by MBE
p.259

Electronic Properties of SiC Polytypes and Heterostructures
p.265

Band Structure Interpretation of the Optical Transitions between Low-Lying Conduction Bands in n-Type Doped SiC Polytypes
p.271

Calculated Density of States and Carrier Concentration in 4H- and 6H-SiC
p.275

Theoretical Studies on Defects in SiC
p.279

HomeMaterials Science ForumSilicon Carbide, III-Nitrides and Related...Observation of 3-Fold Periodicity in 3C-SiC Layers...

Observation of 3-Fold Periodicity in 3C-SiC Layers Grown by MBE

Abstract:

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Periodical:

Materials Science Forum (Volumes 264-268)

Main Theme:

Silicon Carbide, III-Nitrides and Related Materials

Edited by:

G. Pensl, H. Morkoç, B. Monemar and E. Janzén

Pages:

259-264

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.264-268.259

Citation:

U. Kaiser et al., "Observation of 3-Fold Periodicity in 3C-SiC Layers Grown by MBE", Materials Science Forum, Vols. 264-268, pp. 259-264, 1998

Online since:

February 1998

Authors:

Ute Kaiser, P.D. Brown, A. Chuvilin, Igor I. Khodos, Andreas Fissel, W. Richter, A. Preston, Colin J. Humphreys

Keywords:

Homoepitaxy, Molecular Beam Epitaxy (MBE), RHEED

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