TEM In-Situ Observation of SiO2 Doped TZP at High Temperatures

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Periodical:

Materials Science Forum (Volumes 304-306)

Edited by:

T. Sakuma, T. Aizawa, K. Higashi

Pages:

525-530

DOI:

10.4028/www.scientific.net/MSF.304-306.525

Citation:

Y. Ikuhara et al., "TEM In-Situ Observation of SiO2 Doped TZP at High Temperatures", Materials Science Forum, Vols. 304-306, pp. 525-530, 1999

Online since:

February 1999

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$35.00

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