Anisotropy of Inversion Channel Mobility in 4H- and 6H-SiC MOSFETs on (11-20) Face

Abstract:

Article Preview

Info:

Periodical:

Materials Science Forum (Volumes 338-342)

Edited by:

Calvin H. Carter, Jr., Robert P. Devaty, and Gregory S. Rohrer

Pages:

1105-1108

DOI:

10.4028/www.scientific.net/MSF.338-342.1105

Citation:

H. Yano et al., "Anisotropy of Inversion Channel Mobility in 4H- and 6H-SiC MOSFETs on (11-20) Face", Materials Science Forum, Vols. 338-342, pp. 1105-1108, 2000

Online since:

May 2000

Export:

Price:

$35.00

In order to see related information, you need to Login.