MOSFET Performance of 4H-, 6H-, and 15R-SiC Processed by Dry and Wet Oxidation

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Periodical:

Materials Science Forum (Volumes 338-342)

Edited by:

Calvin H. Carter, Jr., Robert P. Devaty, and Gregory S. Rohrer

Pages:

1109-1112

DOI:

10.4028/www.scientific.net/MSF.338-342.1109

Citation:

H. Yano et al., "MOSFET Performance of 4H-, 6H-, and 15R-SiC Processed by Dry and Wet Oxidation", Materials Science Forum, Vols. 338-342, pp. 1109-1112, 2000

Online since:

May 2000

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$35.00

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