High-Power P-Channel UMOS IGBT's in 6H-SiC for High Temperature Operation

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Periodical:

Materials Science Forum (Volumes 338-342)

Edited by:

Calvin H. Carter, Jr., Robert P. Devaty, and Gregory S. Rohrer

Pages:

1427-1430

DOI:

10.4028/www.scientific.net/MSF.338-342.1427

Citation:

S. H. Ryu et al., "High-Power P-Channel UMOS IGBT's in 6H-SiC for High Temperature Operation", Materials Science Forum, Vols. 338-342, pp. 1427-1430, 2000

Online since:

May 2000

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$35.00

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