High Quality GaN on Si(111) using (AlN/GaN)x Superlattice and Maskless ELO

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Periodical:

Materials Science Forum (Volumes 338-342)

Edited by:

Calvin H. Carter, Jr., Robert P. Devaty, and Gregory S. Rohrer

Pages:

1487-1490

DOI:

10.4028/www.scientific.net/MSF.338-342.1487

Citation:

H. Lahrèche et al., "High Quality GaN on Si(111) using (AlN/GaN)x Superlattice and Maskless ELO", Materials Science Forum, Vols. 338-342, pp. 1487-1490, 2000

Online since:

May 2000

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$35.00

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