Formation of Passivated Layers in P-Type SiC by Low Energy Ion Implantation of Hydrogen

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Periodical:

Materials Science Forum (Volumes 338-342)

Edited by:

Calvin H. Carter, Jr., Robert P. Devaty, and Gregory S. Rohrer

Pages:

933-936

DOI:

10.4028/www.scientific.net/MSF.338-342.933

Citation:

N. Achtziger et al., "Formation of Passivated Layers in P-Type SiC by Low Energy Ion Implantation of Hydrogen", Materials Science Forum, Vols. 338-342, pp. 933-936, 2000

Online since:

May 2000

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