Silicon Carbide and Related Materials - 1999

Volumes 338-342

doi: 10.4028/www.scientific.net/MSF.338-342

Silicon Carbide and Related Materials - 1999

Description:

Silicon carbide is the semiconductor of choice for new applications including electric power devices, high frequency devices, high temperature devices, and radiation resistant devices. The III-Nitride compound semiconductors are well suited for optoelectronics and are promising materials for high frequency devices. This two-volume set contains written versions of papers presented at the International Conference on Silicon Carbide and Related Materials – 1999 (ICSCRM’99), held October 10-15, 1999, at Research Triangle Park, North Carolina.

Keywords:
The growth of this biennial international conference to over 650 participants from 25 countries attests to the rapidly increasing interest in large bandgap semiconductors in both academia and industry. These volumes contain 401 papers, 19 of which were invited. The principal topics organized as chapters are: 1) SiC bulk growth, 2) SiC epitaxy and thin film growth, 3) physical properties of SiC (structure, surfaces and interfaces, optical and electrical properties, and magnetic resonance), 4) processing of SiC, 5) SiC devices, 6) growth of III-Nitrides and related materials, 6) physical properties of III-Nitrides, and 8) III-Nitrides: processing and devices.

Info:

ISBN-13:
978-0-87849-854-3
Editors:
Calvin H. Carter, Jr., Robert P. Devaty, and Gregory S. Rohrer
Pages:
1786
Year:
2000
Edition:
hardcover, 2-vol. Set

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