Impact of SiC Source Material on Temperature Field and Vapor Transport During SiC PVT Crystal Growth Process

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Periodical:

Materials Science Forum (Volumes 353-356)

Edited by:

G. Pensl, D. Stephani and M. Hundhausen

Pages:

11-14

DOI:

10.4028/www.scientific.net/MSF.353-356.11

Citation:

P. J. Wellmann et al., "Impact of SiC Source Material on Temperature Field and Vapor Transport During SiC PVT Crystal Growth Process", Materials Science Forum, Vols. 353-356, pp. 11-14, 2001

Online since:

January 2001

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$35.00

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