Growth of 3C-SiC on Si by Low Temperature CVD

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Periodical:

Materials Science Forum (Volumes 353-356)

Edited by:

G. Pensl, D. Stephani and M. Hundhausen

Pages:

159-162

Citation:

T. Cloitre et al., "Growth of 3C-SiC on Si by Low Temperature CVD", Materials Science Forum, Vols. 353-356, pp. 159-162, 2001

Online since:

January 2001

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