From Relaxed to Highly Tensily Strained GaN Grown on 6H-SiC and Si(111): Optical Characterization

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Periodical:

Materials Science Forum (Volumes 353-356)

Edited by:

G. Pensl, D. Stephani and M. Hundhausen

Pages:

795-798

DOI:

10.4028/www.scientific.net/MSF.353-356.795

Citation:

M. Leroux et al., "From Relaxed to Highly Tensily Strained GaN Grown on 6H-SiC and Si(111): Optical Characterization", Materials Science Forum, Vols. 353-356, pp. 795-798, 2001

Online since:

January 2001

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