Silicon Carbide and Related Materials 2000

Volumes 353-356

doi: 10.4028/www.scientific.net/MSF.353-356

Silicon Carbide and Related Materials 2000

Description:

Wide bandgap semiconductors such as SiC, III-V nitrides and related compounds are currently attracting more and more attention due to their very interesting physical properties, which are different from those of conventional semiconductors. Steady improvement of the crystal quality and improved knowledge of the physical properties of these materials are leading to rapid developments in high-power, high-temperature, high-frequency electronics and blue light emitters.
Volume is indexed by Thomson Reuters CPCI-S (WoS).

Keywords:
This volume presents the present experimental and theoretical knowledge on the growth of bulk crystals and epitaxial layers, the mechanical, thermal and electronic properties of the grown materials, as well as the development of suitable processes and electronic devices that will have a profound effect on society’s ability to better utilize its strategic resources in the future.
Topics covered include Bulk Growth Epitaxial Growth Material Properties (such as structural, electrical, optical, defects, etc) Surfaces and Interfaces Device Processes (such as implantation, doping, contacts, etching, etc) Devices ( such as power, high temperature, high frequency, sensors, etc)

Info:

ISBN-13:
978-0-87849-873-4
Editors:
G. Pensl, D. Stephani and M. Hundhausen
Pages:
860
Year:
2001
Edition:
hardcover

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