Pulsed Positron Beam Study of As-Grown Defects in Epitaxial SiC

Abstract:

Article Preview

Info:

Periodical:

Materials Science Forum (Volumes 363-365)

Edited by:

Werner Triftshäuser, Gottfried Kögel and Peter Sperr

Pages:

460-462

DOI:

10.4028/www.scientific.net/MSF.363-365.460

Citation:

D.T. Britton et al., "Pulsed Positron Beam Study of As-Grown Defects in Epitaxial SiC", Materials Science Forum, Vols. 363-365, pp. 460-462, 2001

Online since:

April 2001

Export:

Price:

$35.00

In order to see related information, you need to Login.