Defects Induced by Reactive Ion Etching (RIE) in GaAs and Correlation with EL2

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Periodical:

Materials Science Forum (Volumes 38-41)

Edited by:

G. Ferenczi

Pages:

67-72

Citation:

T. Ikoma and Y. Hagihara, "Defects Induced by Reactive Ion Etching (RIE) in GaAs and Correlation with EL2", Materials Science Forum, Vols. 38-41, pp. 67-72, 1989

Online since:

January 1991

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$38.00

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