Reduction of Capture Barrier Height of Pressure-Induced Deep Donors (DX Center)in GaAs:Si

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Periodical:

Materials Science Forum (Volumes 38-41)

Edited by:

G. Ferenczi

Pages:

851-856

DOI:

10.4028/www.scientific.net/MSF.38-41.851

Citation:

M. F. Li et al., "Reduction of Capture Barrier Height of Pressure-Induced Deep Donors (DX Center)in GaAs:Si", Materials Science Forum, Vols. 38-41, pp. 851-856, 1989

Online since:

January 1991

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$35.00

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