Weak Localization in SiGe Quantum Wells Doped with Boron

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Periodical:

Materials Science Forum (Volumes 384-385)

Edited by:

S. Asmontas, A. Dargys and H.G. Roskos

Pages:

35-38

DOI:

10.4028/www.scientific.net/MSF.384-385.35

Citation:

R. Zobl et al., "Weak Localization in SiGe Quantum Wells Doped with Boron", Materials Science Forum, Vols. 384-385, pp. 35-38, 2002

Online since:

January 2002

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