Quantum and Random Impurity Effects in Ultra-Short MOSFET

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Periodical:

Materials Science Forum (Volumes 384-385)

Edited by:

S. Asmontas, A. Dargys and H.G. Roskos

Pages:

51-58

DOI:

10.4028/www.scientific.net/MSF.384-385.51

Citation:

P. Dollfus et al., "Quantum and Random Impurity Effects in Ultra-Short MOSFET", Materials Science Forum, Vols. 384-385, pp. 51-58, 2002

Online since:

January 2002

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$35.00

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